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Honda, Mitsunori; Baba, Yuji; Hirao, Norie*; Sekiguchi, Tetsuhiro
Journal of Physics; Conference Series, 100, p.052071_1 - 052071_5, 2008/03
Times Cited Count：8 Percentile：91.75(Nanoscience & Nanotechnology)no abstracts in English
Yamamoto, Hiroyuki; Yamada, Yoichi; Sasase, Masato*; Esaka, Fumitaka
Journal of Physics; Conference Series, 100, p.012044_1 - 012044_4, 2008/00
Times Cited Count：6 Percentile：88.13(Nanoscience & Nanotechnology)Non-destructive depth profile analysis with better depth resolution is required for the characterization of nano-materials. X-ray photoelectron spectroscopy (XPS) is the typically non-destructive analysis, however, XPS with fixed excitation energy source cannot provide depth profile without additional technique. On the other hand, analyzing depth of XPS can be varied with the energy tunable excitation source, such as the synchrotron-radiation (SR), since the escape depth of the photoelectrons depends on their kinetic energy. In the present study, Ge thin films (2,4 nm) on two different Si substrates (hydrogen terminated, native oxide) has been analyzed to obtain depth profile of the thin film and buried interface of Ge/Si under the film with two different Si substrates. The XPS spectra clearly show the difference obtained from the varied analyzing depth. These results suggest that the SR-XPS can be applicable for non-destructive depth profile analysis of surface and buried interface.
at nanometer scale by photoelectron emission microscopy combined with synchrotron radiationBaba, Yuji; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Honda, Mitsunori; Hirao, Norie*; Deng, J.; Narita, Ayumi
Journal of Physics; Conference Series, 100, p.012015_1 - 012015_4, 2008/00
Times Cited Count：1 Percentile：51.75(Nanoscience & Nanotechnology)Chemical-state-selective mapping of micro-patterns for silicon compounds has been demonstrated using photoelectron emission microscopy excited by soft X-rays from synchrotron light source. The samples investigated were micro-patterns of silicon oxides, silicon nitrides, and organic silicon compounds. By scanning the X-ray energy around the Si 
-edge, we succeeded in observing the sub-micron images depending on the valence states. When we annealed the sample, the lateral diffusion was observed from 700
C. During the annealing, however, no intermediate valence states were observed at the Si-SiO
interfaces. It was elucidated that the diffusion of oxygen induced the sudden changes of the Si valence states from Si
to Si
without any intermediate valence states. The results for the chemical-state-selective mappings and lateral diffusions are also presented for organic silicon compounds.
-FeSi thin film on Si(100) substrate prepared by ion beam sputter depositionSasase, Masato*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
Journal of Physics; Conference Series, 100, p.042016_1 - 042016_4, 2008/00
Times Cited Count：3 Percentile：76.15(Nanoscience & Nanotechnology)Defect formation behavior in the -FeSi on Si(100) has been discussed by using cross sectional transmission electron microscope.
Ogiwara, Norio; Suganuma, Kazuaki; Hikichi, Yusuke; Kamiya, Junichiro; Kinsho, Michikazu; Sukenobu, Satoru*
Journal of Physics; Conference Series, 100, p.092024_1 - 092024_5, 2008/00
Times Cited Count：4 Percentile：81.63(Nanoscience & Nanotechnology)Pure Ti is adopted as a material for ducts and bellows at the 3 GeV-RCS in J-PARC project, because of its small residual radioactivity. In the particle accelerator, the H outgassing due to ion impact is often dominant gas release. As the reduction of hydrogen content probably leads to the suppression of ion induced desorption, we intend to reduce the hydrogen content in the Ti by in-situ vacuum baking. First of all, thermal desorption behavior and the change in hydrogen content have been investigated. The vacuum firing over than 550C is effective to reduce the hydrogen content in the Ti. The mechanical properties have been also monitored because a grain growth leads to the decrease of mechanical strength. Even after the treatment at 750C for 12 h the decreases in tensile and yield strength are so small (
10%) that we have no anxiety about the reduction of mechanical strength. Based upon this study, the vacuum firing has been applied for the RCS machine.
/Si(001) interface; Dependence on oxidation temperatureOgawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*
no journal, ,
To verify experimentally the unified model of Si oxidation reactions mediated by point defects generation (emitted Si atoms + vacancies) due to oxidation-induced strain, real-time photoelectron spectroscopy using synchrotron radiation was employed to monitor the oxidation-induced strained Si atom at SiO/Si interface, oxidation states, and the oxide thickness simultaneously during oxidation on n-type Si(001) surfaces with O gas. Upon introducing O gas at 300C, both Si
and Si increase with time and then Si decreases gradually at first oxide layer, while Si continues to increase, but with a decreased rate. It is found that the amount of Si and Si at the completion of first oxide layer growth decrease gradually with raising temperature from 300 to 600C, where oxide grows in the Langmuir-type adsorption manner. These results indicate that the oxidation-induced strain decreases with surface temperature.
7 and Ge(111)-55Asaoka, Hidehito; Yamazaki, Tatsuya; Shamoto, Shinichi
no journal, ,
The importance of surface stress as a factor in the surface reconstruction is beginning to be widely recognized in modern nanotechnology. The Si(111)-77 reconstructed surface is well known to be based on the dangling bonds reduction and adatom formation. The surface reconstruction should result in different surface stress from the bulk one, while the reconstruction should be affected directly by the stress. The stress behavior and surface structure were observed simultaneously by using real-time measurement of substrate curvature and reflection high energy electron diffraction (RHEED) methods.
Matsue, Masaki*; Arakawa, Satoru*; Tanaka, Toshihiro*; Sawa, Soji*; Ogiwara, Norio; Suganuma, Kazuaki
no journal, ,
At the 3 GeV-RCS in J-PARC project, pure Ti is adopted as a material for bellows. The space available for the bellows is so narrow that the requirements are hard. To make the hydro-formed bellows like the welded ones, it is essential to bend and press the Ti plates and to keep the 2 sides facing each other in close contact. The repetition of the combination of bending (pressing) with annealing enables us to realize the close contact of Ti plates. We produced the experimental bellows with the inner diameter of 50 mm. It shows suitable performance: (1) spring rates are 1.5 N/mm (axial) and 4.0 N/mm (lateral), respectively; (2) endurance test shows the fatigue life of over than 1 million cycles with the displacement of 20 mm. Thus we have succeeded in developing the hydro-formed bellows with the same flexibility as the welded ones. Now we have completed the performance tests about the prototype of the large bellows (400 mm in a diameter), and mass production has been performed.
Ogiwara, Norio; Kinsho, Michikazu; Kamiya, Junichiro; Yamamoto, Kazami; Suganuma, Kazuaki; Yoshimoto, Masahiro; Saito, Yoshio*
no journal, ,
Kuroiwa, Masahide*; Matsumoto, Nobuhiko*; Fujii, Susumu*; Ogiwara, Norio; Arai, Hideyuki*
no journal, ,
2" surfaceYamada, Yoichi; Girard, A.*; Asaoka, Hidehito; Yamamoto, Hiroyuki; Shamoto, Shinichi
no journal, ,
Simple surface preparation method for the single-domain of Si(110)-162 utilizing the electromigration is proposed. It is found that the DC electric current along the surface reconstruction rows elongates the rpws. By means of the controlled electromigration, a micrometer-wide, single-domain of 162 surface can be successfully fabricated with nearly perfect reproducibility. The fabricated single-domain of Si(110) is not only useful for future basic researches on this surface, but also has high potential for application due to its strong one-dimensionality.
